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| PN5134 Discrete POWER & Signal Technologies PN5134 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 10 20 3.5 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN5134 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN5134 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CES ICBO ICES Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current I C = 10 mA, I B = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 I C = 10 A VCB = 15 V, IE = 0, TA = 65 C VCE = 15 V, IC = 0 10 20 3.5 20 10 0.4 V V V V A A ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 10 mA VCE = 0.4 V, IC = 30 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 3.3 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 3.3 mA 20 15 150 0.25 0.20 0.9 1.1 V V V V 0.70 0.72 SMALL SIGNAL CHARACTERISTICS Cob hfe Output Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 1.0 MHz IC = 10 mA, VCE = 10 V, f = 100 MHz 2.5 4.0 pF SWITCHING CHARACTERISTICS ts ton td tr toff ts tf Storage Time Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 3.0V, IC = 10 mA I B1 = IB2 = 3.3 mA I C = IB1 = IB2 = 10 mA VCC = 3.0 V, IC = 10 mA, I B1 = 3.3 mA 18 18 14 12 18 13 13 ns ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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